4H-SiC VJFETs with Self-Aligned Contacts
نویسندگان
چکیده
منابع مشابه
Thermal Runaway Robustness of SiC VJFETs
One of the key advantage of SiC power devices over their Si counterparts is their ability to operate at higher temperature (in theory up to 1000 K for a 1000 V-rated SiC device as compared to less that 500 K for a comparable Si device [1]). Practical tests have already demonstrated operation at elevated temperature. For example, in [2], SiC JFET and diode operate at 450°C (723 K) ambient temper...
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1.—Department of Physics and Astronomy, Youngstown State University, Youngstown, OH 44555, USA. 2.—Department of Physics, Georgia Southern University, Statesboro, GA 30460, USA. 3.—Department of Physics, Auburn University, Auburn, AL 36849, USA. 4.—Present address: Department of Materials Science and Engineering, University of Illinois at Urbana– Champaign, Urbana, IL 61801, USA. 5.—e-mail: tno...
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ژورنال
عنوان ژورنال: Materials Science Forum
سال: 2015
ISSN: 1662-9752
DOI: 10.4028/www.scientific.net/msf.821-823.793